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TPS7H2201HKR/EM

TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse

1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TPS7H2201HKR/EM

TPS7H2201-SP Radiation Hardened 1.5-V to 7-V, 6-A Load Switch

1Features 1•Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg •Integratedsingle

TITexas Instruments

德州仪器美国德州仪器公司

TPS7H2201HKR/EM

Radiation Hardened 1.5-V to 7-V, 6-A Load Switch

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TPS7H2201HKR/EM

Radiation Hardened 1.5-V to 7-V, 6-A Load Switch

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

PTPS7H2201DAPTSEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

PTPS7H2201HKR/EM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

PTPS7H2201HKR/EM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

PTS7H2201HKR/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

PTS7H2201HKR/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TPS7H2201

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TPS7H2201EVM-CVAL

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1•Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg •Integratedsingle

TITexas Instruments

德州仪器美国德州仪器公司

TPS7H2201EVM-CVAL

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TPS7H2201MDAPTSEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TPS7H2201-SEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TPS7H2201-SEP

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州仪器美国德州仪器公司

TPS7H2201-SP

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TPS7H2201-SP

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TPS7H2201-SP

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TPS7H2201-SP

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features •Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) •Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州仪器美国德州仪器公司

TPS7H2201-SP

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1•Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg •Integratedsingle

TITexas Instruments

德州仪器美国德州仪器公司

供应商型号品牌批号封装库存备注价格
德州仪器
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
TEXAS INSTRUMENTS
23+
CFP16
9600
全新原装正品!一手货源价格优势!
询价
TI/德州仪器
21+
CFP-16
13880
公司只售原装,支持实单
询价
TI/德州仪器
21+
CFP-16
63880
本公司只售原装 支持实单
询价
TI/德州仪器
22+
CFP-16
8880
原装认准芯泽盛世!
询价
TI/德州仪器
2339+
CFP-16
32280
原装现货 假一罚十!十年信誉只做原装!
询价
TI
22+
CFP (HKR)
6000
原厂原装,价格优势!13246658303
询价
TI
22+
CFP-16
30000
只做原装
询价
TI/德州仪器
23+
CFP-16
2000
原装正品,支持实单
询价
TI/德州仪器
23+
CFP-16
2000
正规渠道,只有原装!
询价
更多TPS7H2201HKR/EM供应商 更新时间2024-6-8 15:00:00