18V eFuse with True Reverse Blocking and DevSleep Support for SSDs

文件：2.80089 Mbytes 页数：47 Pages

TI

德州仪器

TPS25940x 2.7 – 18V eFuse with True Reverse Blocking and DevSleep Support for SSDs

1 Features 1• 2.7 V – 18 V Operating Voltage, 20 V (Max) • 42 mΩ R ON (Typical) • 0.6 A to 5.3 A Adjustable Current Limit (±8%) • IMON Current Indicator Output (±8%) • 200 μA Operating I Q (Typical) • 95 μA DevSleep Mode IQ (Typical) • 15 μA Disabled IQ (Typical) • ±2% Overvolt

文件：2.36313 Mbytes 页数：47 Pages

TI

德州仪器

TPS25940x 2.7 – 18V eFuse with True Reverse Blocking and DevSleep Support for SSDs

1 Features 1• 2.7 V – 18 V Operating Voltage, 20 V (Max) • 42 mΩ R ON (Typical) • 0.6 A to 5.3 A Adjustable Current Limit (±8%) • IMON Current Indicator Output (±8%) • 200 μA Operating I Q (Typical) • 95 μA DevSleep Mode IQ (Typical) • 15 μA Disabled IQ (Typical) • ±2% Overvolt

文件：2.36313 Mbytes 页数：47 Pages

TI

德州仪器

TPS25940x 2.7 – 18V eFuse with True Reverse Blocking and DevSleep Support for SSDs

1 Features 1• 2.7 V – 18 V Operating Voltage, 20 V (Max) • 42 mΩ R ON (Typical) • 0.6 A to 5.3 A Adjustable Current Limit (±8%) • IMON Current Indicator Output (±8%) • 200 μA Operating I Q (Typical) • 95 μA DevSleep Mode IQ (Typical) • 15 μA Disabled IQ (Typical) • ±2% Overvolt

文件：2.36313 Mbytes 页数：47 Pages

TI

德州仪器

TPS25940x 2.7 – 18V eFuse with True Reverse Blocking and DevSleep Support for SSDs

1 Features 1• 2.7 V – 18 V Operating Voltage, 20 V (Max) • 42 mΩ R ON (Typical) • 0.6 A to 5.3 A Adjustable Current Limit (±8%) • IMON Current Indicator Output (±8%) • 200 μA Operating I Q (Typical) • 95 μA DevSleep Mode IQ (Typical) • 15 μA Disabled IQ (Typical) • ±2% Overvolt

文件：2.36313 Mbytes 页数：47 Pages

TI

德州仪器

TPS25940x 2.7 – 18V eFuse with True Reverse Blocking and DevSleep Support for SSDs

1 Features 1• 2.7 V – 18 V Operating Voltage, 20 V (Max) • 42 mΩ R ON (Typical) • 0.6 A to 5.3 A Adjustable Current Limit (±8%) • IMON Current Indicator Output (±8%) • 200 μA Operating I Q (Typical) • 95 μA DevSleep Mode IQ (Typical) • 15 μA Disabled IQ (Typical) • ±2% Overvolt

文件：2.36313 Mbytes 页数：47 Pages

TI

德州仪器

TPS25940x 2.7 – 18V eFuse with True Reverse Blocking and DevSleep Support for SSDs

1 Features 1• 2.7 V – 18 V Operating Voltage, 20 V (Max) • 42 mΩ R ON (Typical) • 0.6 A to 5.3 A Adjustable Current Limit (±8%) • IMON Current Indicator Output (±8%) • 200 μA Operating I Q (Typical) • 95 μA DevSleep Mode IQ (Typical) • 15 μA Disabled IQ (Typical) • ±2% Overvolt

文件：2.36313 Mbytes 页数：47 Pages

TI

德州仪器

2.7-V to 18-V eFuse with Integrated Short-to-Battery Protection

文件：4.05851 Mbytes 页数：50 Pages

TI

德州仪器

TPS25940x-Q1 2.7-V to 18-V eFuse with Integrated Short-to-Battery Protection

文件：4.08989 Mbytes 页数：50 Pages

TI

德州仪器

丝印：T594LQ；Package：WQFN；TPS25940x-Q1 2.7-V to 18-V eFuse with Integrated Short-to-Battery Protection

文件：4.08989 Mbytes 页数：50 Pages

TI

德州仪器