| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SmallSignalSwitchingDiodes,LowLeakageCurrent FEATURES •Siliconplanardiodes •Verylowreversecurrent •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS Protectioncircuits,timedelaycircuits,peakfollower circuits,logarithmicamplifiers | VishayVishay Siliconix 威世科技 | Vishay | ||
SmallSignalFastSwitchingDiode,HighVoltage FEATURES •Siliconplanardiode •Verylowreversecurrent •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Protectioncircuits,delaycircuits | VishayVishay Siliconix 威世科技 | Vishay | ||
200mAAxialLeadedSmallSignalSwitchingDiodes Features ●SiliconPlanarDiode ●Verylowreversecurrent ●Lead(Pb)-freecomponent ●ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
SiliconPlanarDiode Features •SiliconPlanarDiode •Verylowreversecurrent •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Protectioncircuits,delaycircuits | VishayVishay Siliconix 威世科技 | Vishay | ||
SmallSignalSwitchingDiode,HighVoltage | VishayVishay Siliconix 威世科技 | Vishay | ||
SmallSignalSwitchingDiode,HighVoltage | VishayVishay Siliconix 威世科技 | Vishay | ||
SmallSignalSwitchingDiode,HighVoltage | VishayVishay Siliconix 威世科技 | Vishay | ||
UHFvariablecapacitancediode DESCRIPTION TheBB135isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Thematchedtype,BB134hasthesamespecification. FEATURES •Excellentlinearity •VerysmallplasticSMDpackage. •C28:1.9pF;ratio:10 | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
UHFVariableCapacitanceDiode DESCRIPTION TheBB135isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Thematchedtype,BB134hasthesamespecification. FEATURES •Excellentlinearity •VerysmallplasticSMDpackage. •C28:1.9pF;ratio:10 | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | LRC | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuitdrivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | SIEMENS | ||
NPNSiliconDigitalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuitdrivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuitdrivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistorArray(Switchingcircuit,inverter,interfacecircuit,drivercircuit) | SIEMENS Siemens Ltd | SIEMENS | ||
NPNSiliconDigitalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuitdrivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=10kΩ,R2=47KΩ) | SIEMENS Siemens Ltd | SIEMENS |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
- 封装形式：
- 极限工作电压：
80V
- 最大电流允许值：
1A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
- 可代换的型号：
3DG182B,
- 最大耗散功率：
0.7W
- 放大倍数：
- 图片代号：
NO
- vtest：
80
- htest：
999900
- atest：
1
- wtest：
.7
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
2020+ |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | |||
TI |
2023+ |
16800 |
芯为只有原装 |
询价 | |||
AVX |
D |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
TOKEN-德通 |
24+25+/26+27+ |
车规-被动器件 |
96500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
TI |
25336 |
只做正品 |
询价 |
