TPH1110ENH芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TPH1110ENH	文件：229.84 Kbytes Page：9 Pages	丝印：TPH1110ENH；Package：SOP；MOSFETs Silicon N-channel MOS Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5 文件：229.84 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TPH1110ENH	文件：229.84 Kbytes Page：9 Pages	丝印：TPH1110ENH；Package：SOP；MOSFETs Silicon N-channel MOS Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5 文件：229.84 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA

更多TPH1110ENH供应商更新时间2025-9-14 14:00:00