首页 >TPCC8A04>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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AxialGeneralPurposePlasticRectifier FEATURES ·Lowcoatconstruction ·Lowforwardvoltagedrop ·Lowreverseleakage ·Highforwardsurgecurrentcapability ·Hightemperaturesolderingguaranteed: 260℃/10secods/.375”(9.5mm)leadlengthat5lbs(2.3kg)tension | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
GlassPassivatedSuperFastRecoveryRectifier | YENYOYenyo Technology Co., Ltd. 元耀科技元耀科技股份有限公司 | YENYO | ||
GlassPassivatedSuperFastRecoveryRectifier | YENYOYenyo Technology Co., Ltd. 元耀科技元耀科技股份有限公司 | YENYO | ||
GlassPassivatedSuperFastRecoveryRectifier | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
GlassPassivatedSuperFastRecoveryRectifier | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TOSHIBAFieldEffectTransistorwithBuilt-inSchottkyBarrierDiode HighEfficiencyDC-DCConverterApplications NotebookPCApplications PortableEquipmentApplications •Built-inaschottkybarrierdiode Lowforwardvoltage:VDSF=−0.6V(max) •High-speedswitching •Smallgatecharge:QSW=13.4nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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