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型号	下载订购	功能描述	制造商上传企业	LOGO
TPB65R075DFD	文件：753.66 Kbytes Page：10 Pages	丝印：65R075DFD；Package：TO-263；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：753.66 Kbytes 页数：10 Pages	WUMC 紫光国微	WUMC
TPB65R075DFD	文件：753.66 Kbytes Page：10 Pages	丝印：65R075DFD；Package：TO-263；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：753.66 Kbytes 页数：10 Pages	WUMC 紫光国微	WUMC
TPB65R075DFD	文件：753.65 Kbytes Page：10 Pages	丝印：65R075DFD；Package：TO-263；650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：753.65 Kbytes 页数：10 Pages	WUMC 紫光国微	WUMC
TPB68	文件：53.82 Kbytes Page：5 Pages	TRISIL DESCRIPTION The TPB series are TRISIL devices especially designed for protecting sensitive telecommunication equipment against lightning and transient voltages induced by AC power lines. They are available in the CB429 axial package. TRISIL devices provide bidirectional protection by crowbar act 文件：53.82 Kbytes 页数：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
TPB70R360M	文件：944.88 Kbytes Page：13 Pages	丝印：70R360M；Package：TO-263；700V Super-junction Power MOSFET Description 700V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m 文件：944.88 Kbytes 页数：13 Pages	WUMC 紫光国微	WUMC
TPB70R360M	文件：940.77 Kbytes Page：13 Pages	丝印：70R360M；Package：TO-263；700V Super-junction Power MOSFET Description 700V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m 文件：940.77 Kbytes 页数：13 Pages	WUMC 紫光国微	WUMC
TPB70R360M	文件：940.76 Kbytes Page：13 Pages	丝印：70R360M；Package：TO-263；700V Super-junction Power MOSFET Description 700V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m 文件：940.76 Kbytes 页数：13 Pages	WUMC 紫光国微	WUMC
TPB70R360M	文件：940.77 Kbytes Page：13 Pages	丝印：70R360M；Package：TO-263；700V Super-junction Power MOSFET Description 700V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness m 文件：940.77 Kbytes 页数：13 Pages	WUMC 紫光国微	WUMC
TPB74121U2010M060	文件：1.67279 Mbytes Page：4 Pages	Low Capacitance Bi-directional ESD DIODE Features \| o Low operating voltage: 1V « Ultra low capacitance: 0.2pF (Typ) « Ultra low leakage: nA level o Low clamping voltage « IEC 61000-4-2 (ESD) immunity test Air discharge: £15kV Contact discharge: +12kV/ —~IEC61000-4-4 (EFT) 40A (5/5015) ~IEC61000-4-5 (Lightning) 4A (8/20ps) o 文件：1.67279 Mbytes 页数：4 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
TPB80R300C	文件：1.20968 Mbytes Page：16 Pages	丝印：80R300C；Package：TO-263；800V Super-junction Power MOSFET Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness 文件：1.20968 Mbytes 页数：16 Pages	WUMC 紫光国微	WUMC

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产品属性

产品编号：
TPB
制造商：
Greenlee Communications
类别：
测试与计量 > 测试引线 - 热电偶，温度探头
包装：
散装
类型：
K 型热电偶
应用：
空气，气体，表面
尖头 - 类型：
气温测试，珠状
插头类型：
双香蕉插头
探头温度范围：
-40 ~ 399°F（-40 ~ 204°C）
插头颜色：
黄色
探头长度：
39.370"（1000.00mm）
描述：
THERM PROBE-BEAD TYPE K

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市艾宇欣科技有限公司	TPB	Greenlee	1935+	N/A	656	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市易讯博科技有限公司	TPB	Greenlee	22+	NA	656	加我QQ或微信咨询更多详细信息,	询价
深圳市毅创腾电子科技有限公司	TPB-30654	DATEL	23+	模块	240	全新原装正品,量大可订货!可开17%增值票!价格优势!	询价
上海鑫科润电子科技有限公司	TPB-5/5-12/1-Q48	DATEL	04+	DIP-9	23	原装现货海量库存欢迎咨询	询价
上海金庆电子技术有限公司	TPB11CGRA004	TEConnectivity	新		147	全新原装货期两周	询价
深圳市振宏微科技有限公司	TPB62A15B	THOMSON	23+	NA	2111	专做原装正品,假一罚百!	询价
深圳市粤骏腾电子科技有限公司	TPB20097	ERICSSON/爱立信	24+		300	现货供应	询价
上海市鑫鸿达电子	TPB11CGRA004	TE Connectivity	2022+		143	全新原装货期两周	询价
深圳市百诺芯科技有限公司	TPB32003/29	ERICSSON/爱立信	23+	TO-59	8510	原装正品代理渠道价格优势	询价
艾睿（深圳）半导体有限公司	TPB65R070D	无锡紫光微	2447	TO-263	105000	50个/管一级代理专营品牌!原装正品,优势现货,长期	询价

更多TPB供应商更新时间2025-12-24 10:19:00

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