IP44 28W HF EmergencyPolo Bulkhead

DESCRIPTION IP44 28W HF EmergencyPolo Bulkhead with Opal Diffuser and White Base

文件：183.92 Kbytes 页数：2 Pages

KNIGHTSBRIDGE

IP44 28W HF Emergency Polo Bulkhead

DESCRIPTION IP44 28W HF Emergency Polo Bulkhead with Prismatic Diffuser and White Base

文件：231.55 Kbytes 页数：2 Pages

KNIGHTSBRIDGE

丝印：GR；Package：SOD123FL；Surface Monut Schottky Barrier Rectifier

Features Fast switching speed Surface mount package ideally suited for automatic insertion Low power loss, high efficiency Ultra thin profile package for space constrained utilization Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard

文件：594.66 Kbytes 页数：2 Pages

TECHPUBLIC

台舟电子

丝印：2A4；Package：SOD323；Schottky barrier diode

Features General rectification Low VE; Low Ir High reliability

文件：871.88 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：2A4；Package：SOD323；Schottky barrier diode

Features General rectification Low VE; Low Ir High reliability

文件：872.6 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

Brass Trim for TPB14, TPB28 and TPB38 Bulkheads

DESCRIPTION Brass Trim for TPB14, TPB28 and TPB38 Bulkheads

文件：170.3 Kbytes 页数：1 Pages

KNIGHTSBRIDGE

Chrome Trim for TPB14, TPB28 and TPB38 Bulkheads

DESCRIPTION Chrome Trim for TPB14, TPB28 and TPB38 Bulkheads

文件：159.22 Kbytes 页数：1 Pages

KNIGHTSBRIDGE

IP44 38W HF Polo Bulkhead with Prismatic Diffuser

DESCRIPTION IP44 38W HF Polo Bulkhead with Prismatic Diffuser and White Base

文件：197.14 Kbytes 页数：1 Pages

KNIGHTSBRIDGE

TRISIL

DESCRIPTION The TPB series are TRISIL devices especially designed for protecting sensitive telecommunication equipment against lightning and transient voltages induced by AC power lines. They are available in the CB429 axial package. TRISIL devices provide bidirectional protection by crowbar act

文件：53.82 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

丝印：65R075DFD；Package：TO-263；650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：757.4 Kbytes 页数：10 Pages

WUMC

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