SINGLE BUFFER GATE CMOS LOGIC LEVEL SHIFTER

Features » Operate from 1.6V to 5.5V o Low Power Current: lcc=10pA (Max.) +8mA Output Drive (VCC=5.0V) Power Down Protection » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charged-Device Model (C101)

文件：3.93715 Mbytes 页数：8 Pages

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SINGLE 2-INPUT NAND GATE

Features | o Operate from 1.65V to 5.5V « Inputs Accept Voltages To 5.5V « High Noise Immunity « Low Power Dissipation ESD Protection Exceeds JESD22 | -2000-V Human-Body Model (A114-A) ~1000-V Charged-Device Model (C101)

文件：5.81896 Mbytes 页数：10 Pages

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丝印：C100；Package：SOT353；SINGLE 2-INPUT NAND GATE

Features | o Operate from 1.65V to 5.5V « Inputs Accept Voltages To 5.5V « High Noise Immunity « Low Power Dissipation ESD Protection Exceeds JESD22 | -2000-V Human-Body Model (A114-A) ~1000-V Charged-Device Model (C101)

文件：5.81896 Mbytes 页数：10 Pages

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SINGLE 2-INPUT NAND GATE

Features | o Operate from 1.65V to 5.5V « Inputs Accept Voltages To 5.5V « High Noise Immunity « Low Power Dissipation ESD Protection Exceeds JESD22 | -2000-V Human-Body Model (A114-A) ~1000-V Charged-Device Model (C101)

文件：5.81896 Mbytes 页数：10 Pages

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丝印：CA；Package：DFN1510-6；SINGLE 2-INPUT NAND GATE

Features | o Operate from 1.65V to 5.5V « Inputs Accept Voltages To 5.5V « High Noise Immunity « Low Power Dissipation ESD Protection Exceeds JESD22 | -2000-V Human-Body Model (A114-A) ~1000-V Charged-Device Model (C101)

文件：5.81896 Mbytes 页数：10 Pages

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台舟电子

SINGLE 2-INPUT NAND GATE

Features | o Operate from 1.65V to 5.5V « Inputs Accept Voltages To 5.5V « High Noise Immunity « Low Power Dissipation ESD Protection Exceeds JESD22 | -2000-V Human-Body Model (A114-A) ~1000-V Charged-Device Model (C101)

文件：5.81896 Mbytes 页数：10 Pages

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丝印：S100；Package：SOT23-5；SINGLE 2-INPUT NAND GATE

Features | o Operate from 1.65V to 5.5V « Inputs Accept Voltages To 5.5V « High Noise Immunity « Low Power Dissipation ESD Protection Exceeds JESD22 | -2000-V Human-Body Model (A114-A) ~1000-V Charged-Device Model (C101)

文件：5.81896 Mbytes 页数：10 Pages

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丝印：CA7；Package：SOT553；SINGLE 2-INPUT NAND GATE

Features | o Operate from 1.65V to 5.5V « Inputs Accept Voltages To 5.5V « High Noise Immunity « Low Power Dissipation ESD Protection Exceeds JESD22 | -2000-V Human-Body Model (A114-A) ~1000-V Charged-Device Model (C101)

文件：5.81896 Mbytes 页数：10 Pages

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SINGLE 2-INPUT NOR GATE

Features | o Operate from 1.65V to 5.5V +24mA Output Drive (VCC=3.0V) « High Noise Immunity « Power Down Protection | » ESD Protection Exceeds JESD 22 | -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) ~1000-V Charged-Device Model (C101)

文件：5.08065 Mbytes 页数：9 Pages

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丝印：C102；Package：SOT353；SINGLE 2-INPUT NOR GATE

Features | o Operate from 1.65V to 5.5V +24mA Output Drive (VCC=3.0V) « High Noise Immunity « Power Down Protection | » ESD Protection Exceeds JESD 22 | -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) ~1000-V Charged-Device Model (C101)

文件：5.08065 Mbytes 页数：9 Pages

TECHPUBLIC

台舟电子