TP9

Max. output 36V DC, 2A

GeneralFeatures TransformertypeSMPS Inputvoltage100~240VAC Max.output36VDC,2A PlugsupportEU,USA,AUS,UK,JPN ColorBlackorgrey IPratingIP66 CertificateIEC60601-1-2,IEC60601-1,ES60601-1,PSE

TP901C2

LOW LOSS SUPER HIGH SPEED RECTIFIER

Features ●LowVF ●Superhighspeedswitching ●Highreliabilitybyplanerdesign Applications ●Highspeedpowerswitching

TP901C3

LOW LOSS SUPER HIGH SPEED RECTIFIER

Features ●LowVF ●Superhighspeedswitching ●Highreliabilitybyplanerdesign Applications ●Highspeedpowerswitching

TP902C2

LOW LOSS SUPER HIGH SPEED RECTIFIER

Features ●LowVF ●Superhighspeedswitching ●Highreliabilitybyplanerdesign Applications ●Highspeedpowerswitching

TP902C3

LOW LOSS SUPER HIGH SPEED RECTIFIER

Features ●LowVF ●Superhighspeedswitching ●Highreliabilitybyplanerdesign Applications ●Highspeedpowerswitching

TP90H050WS

采用 TO-247 封装的 900V 50mΩ 氮化镓GaN FET; • 易于驱动 – 与标准栅极驱动器兼容\n• 低传导、低开关损耗\n• 低 Qrr (125nC) – 无需任何续流二极管\n• GSD 引脚布局可提升高速设计\n• 通过 JEDEC 认证的 氮化镓GaN技术\n• 符合限制有害物质指令 (RoHS) 规范要求且不含卤素\n• 实现更高效的拓扑 – 易于实施无桥图腾柱设计\n• 快速切换，提高效率\n• 提高功率密度\n• 系统尺寸减小、重量减轻\n• BOM 成本更低\n;

TP90H050WS 900V 50mΩ 氮化镓 (GaN) FET 属于常闭型器件。Transphorm 氮化镓GaN FET通过更低的栅极电荷、更快的切换速度和更小的反向恢复电荷，提供更高的效率，明显超越传统硅 (Si) 器件，具有显著优势。TP90H050WS 经由共源极封装配置封装在行业标准的 3 引线 TO-247 内发售。\n\n

TP9380

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASITP9380isDesignedforClassC,FMBroadcastApplicationsupto108MHz. FEATURES: •ClassCOperation •PG=10dBat75W/108MHz •Omnigold™MetalizationSystem

TP9383

NPN RF POWER TRANSISTOR

DESCRIPTION: TheASITP9383isaCommonEmitterDeviceDesignedforFMBroadcastTransmitterApplicationsinthe88to108MHzBand. FEATURESINCLUDE: ·HighEfficiency ·GoldMetallization ·EmitterBallasting

TP90H050WS

900V Cascode GaN FET in TO-247 (source tab)

TP90H180PS

900V GaN FET in TO-220