P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

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SUTEX

Isolated Transmitter

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MORNSUN

金升阳

2.0A Glass Passivated Bridge Rectifier

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TAITRON

MOSFET, P-Channel Enhancement-Mode, -40V, 6.0 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature High input impedance and high gain \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nFree from secondary breakdown;

Microchip

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology\nThese enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance ❏ Free from secondary breakdown\n❏ Low power drive requirement\n❏ Ease of paralleling\n❏ Low CISS and fast switching speeds\n❏ Excellent thermal stability\n❏ Integral Source-Drain diode\n❏ High input impedance and high gain\n❏ Complementary N- and P-channel devicesApplications\n❏ Logic level interfa;

Microchip

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology\nThese enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance ❏ Free from secondary breakdown\n❏ Low power drive requirement\n❏ Ease of paralleling\n❏ Low CISS and fast switching speeds\n❏ Excellent thermal stability\n❏ Integral Source-Drain diode\n❏ High input impedance and high gain\n❏ Complementary N- and P-channel devicesApplications\n❏ Logic level interfa;

Microchip

微芯科技

包装：散装 类别：连接器，互连器件 线对板 描述：TERM BLOCK 21POS 35DEG 5MM PCB

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