P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

文件：579.68 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

文件：455.81 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

文件：455.81 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

文件：579.68 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

文件：455.81 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

文件：579.68 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

文件：579.68 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

文件：455.81 Kbytes 页数：4 Pages

SUTEX

Tiny Pushbutton Switches

Features/Benefits • Subminiature size—capable of switching 1 AMP • Vertical & right angle terminations • PC & panel mount models • Snap-in front panel mounting available • Epoxy terminal seal-compatible with bottom wash cleaning • RoHS compliant models available Typical Applications • T

文件：1.0751 Mbytes 页数：6 Pages

CK-COMPONENTS

力特

Tiny Pushbutton Switches

Features/Benefits • Subminiature size—capable of switching 1 AMP • Vertical & right angle terminations • PC & panel mount models • Snap-in front panel mounting available • Epoxy terminal seal-compatible with bottom wash cleaning • RoHS compliant models available Typical Applications • T

文件：1.0751 Mbytes 页数：6 Pages

CK-COMPONENTS

力特