N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：444.74 Kbytes 页数：2 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：684.25 Kbytes 页数：5 Pages

SUTEX

MOSFET, N-Channel Enhancement-Mode, 350V, 15 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold \nHigh input impedance \nLow input capacitance \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage \nComplementary N- and P-channel devices;

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：684.25 Kbytes 页数：5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：444.74 Kbytes 页数：2 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：684.25 Kbytes 页数：5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：444.74 Kbytes 页数：2 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：684.25 Kbytes 页数：5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：444.74 Kbytes 页数：2 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Microchip

微芯科技