N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：684.25 Kbytes 页数：5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：444.74 Kbytes 页数：2 Pages

SUTEX

INTEL(英特尔)

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司

INTEL(英特尔)

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司

INTEL(英特尔)

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司