Separately-Excited Step-Down Switching Regulator (Variable Output Type)

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三洋

ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (5V Output type)

文件：282.83 Kbytes 页数：11 Pages

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ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (5V Output type)

文件：148.58 Kbytes 页数：11 Pages

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ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (12V Output type)

文件：281.9 Kbytes 页数：11 Pages

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ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (12V Output type)

文件：147.09 Kbytes 页数：11 Pages

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ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (24V Output type)

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高温50A SCR

The TN5015H-6I offers high thermal performance operation up to 50 A thanks to its junction temperature Tj up to 150 °C. Its fully tab insulated (thanks to ceramic inside) TO-220AB package allows a back to back configuration.\n\n Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate trigger • High junction temperature: Tj = 150 °C \n• Gate triggering current IGT = 15 mA \n• High turn-on current rise dI/dt = 100 A/µs \n• Insulated package TO-220AB: \n•Insulated voltage: 2500 VRMS \n•Complies with UL 1557 (File ref : E81734);

ST

意法半导体

50 A 800 V High Temperature SCR in D2PAK package

Thanks to its junction temperature Tj up to 150 °C, the TN5015H-8G offers high thermal performance operation up to 50 A RMS in a compact D²PAK SMD package.\n\n Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 200 • High junction temperature: Tj = 150 °C \n• 900 V VDSM / VRSM \n• High static immunity dV/dt = 1000 V/μs at 150 °C \n• Halogen-free molding, lead-free plating \n• ECOPACK2 compliant;

ST

意法半导体

50 A 800 V High temperature SCR in TO-220AB-I Insulated package

Thanks to its junction temperature Tj up to 150 °C, the TN5015H-8I offers high thermal performance operation up to 50 A RMS in an insulated TO-220AB package.\n\n Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 20 • High junction temperature: Tj = 150 °C \n• 900 V VDSM / VRSM \n• High static immunity dV/dt = 1000 V/μs at 150 °C \n• Halogen-free molding, lead-free plating \n• Insulated package TO-220AB: \n•Insulated voltage: 2500 VRMS \n•Complies with UL 1554 (file ref. 81734);

ST

意法半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：散装 类别：分立半导体产品 晶闸管 - SCR 描述：SCR 600V 50A D2PAK

STMICROELECTRONICS

意法半导体