丝印：TN5015H8G；Package：D2PAK；50 A 800 V high temperature SCR thyristors in D²PAK package

Features • High junction temperature: Tj = 150 °C • 800 V VDRM / VRRM • 900 V VDSM / VRSM • Low IGT: 15 mA • High static immunity dV/dt = 1000 V/μs at 150 °C • High turn-on rise dI/dt at 200 A/μs • Halogen-free molding, lead-free plating • ECOPACK2 compliant Application • Inrush curren

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STMICROELECTRONICS

意法半导体

50 A 800 V High Temperature SCR in D2PAK package

Thanks to its junction temperature Tj up to 150 °C, the TN5015H-8G offers high thermal performance operation up to 50 A RMS in a compact D²PAK SMD package.\n\n Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 200 • High junction temperature: Tj = 150 °C \n• 900 V VDSM / VRSM \n• High static immunity dV/dt = 1000 V/μs at 150 °C \n• Halogen-free molding, lead-free plating \n• ECOPACK2 compliant;

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意法半导体

50 A 800 V high temperature SCR thyristors in insulated TO-220I package

Features • High junction temperature: Tj = 150 °C • 800 V VDRM / VRRM • 900 V VDSM / VRSM • Low IGT: 15 mA • High static immunity dV/dt = 1000 V/μs at 150 °C • High turn-on rise dI/dt at 200 A/μs • Halogen-free molding, lead-free plating • ECOPACK2 compliant • Insulated package TO-220AB

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STMICROELECTRONICS

意法半导体

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司