丝印：TN5015H8G；Package：D2PAK；50 A 800 V high temperature SCR thyristors in D²PAK package

Features • High junction temperature: Tj = 150 °C • 800 V VDRM / VRRM • 900 V VDSM / VRSM • Low IGT: 15 mA • High static immunity dV/dt = 1000 V/μs at 150 °C • High turn-on rise dI/dt at 200 A/μs • Halogen-free molding, lead-free plating • ECOPACK2 compliant Application • Inrush curren

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STMICROELECTRONICS

意法半导体

High temperature 50 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity dV/dt = 500 V/μs up to 150 °C  Gate triggering current IGT = 15 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn-on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component Description Thanks to its ju

文件：423.97 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

High temperature 50 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity dV/dt = 500 V/μs up to 150 °C  Gate triggering current IGT = 15 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn-on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component Description Thanks to its ju

文件：423.97 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

High temperature 50 A SCRs

Features • High junction temperature: Tj = 150 °C • High noise immunity dV/dt = 500V/μs up to 150 °C • Gate triggering current IGT = 15 mA • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/μs • ECOPACK®2 compliant • Insulated package TO-220AB: – Insulated

文件：386.27 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

High temperature 50 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity up to 150 °C  Gate triggering current IGT = 15 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn-on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component Description Packaged in a non-isolated TO-220

文件：404.87 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

50 A 800 V high temperature SCR thyristors in insulated TO-220I package

Features • High junction temperature: Tj = 150 °C • 800 V VDRM / VRRM • 900 V VDSM / VRSM • Low IGT: 15 mA • High static immunity dV/dt = 1000 V/μs at 150 °C • High turn-on rise dI/dt at 200 A/μs • Halogen-free molding, lead-free plating • ECOPACK2 compliant • Insulated package TO-220AB

文件：539.93 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc Thyristors

FEATURES · IGT Maximum= 50mA · Max. Blocking Voltage = VDRM, VRRM = 1200 V · High Static and Dynamic Commutation APPLICATIONS · Uninterruptible Power Supply (UPS) · Bypass Switch · Battery Charger · Soft Starter for Motor Drive

文件：307.88 Kbytes 页数：3 Pages

ISC

无锡固电

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

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SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：568.42 Kbytes 页数：6 Pages

SUTEX

RF AMPLIFIER MODEL

Features ■ Low Noise Figure: 2.0 dB Typical ■ High Output Power: +24 dBm Typical ■ Operating Temp. - 55 ºC to +85 ºC ■ Environmental Screening Available

文件：63.34 Kbytes 页数：1 Pages

APITECH