N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：477.93 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：477.93 Kbytes 页数：4 Pages

SUTEX

Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, an

文件：506.73 Kbytes 页数：4 Pages

SUTEX

Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, an

文件：506.73 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：495.6 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：495.6 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex TN2540 is a low threshold enhancement mode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors,

文件：480.59 Kbytes 页数：4 Pages

SUTEX

Standard 25 A SCRs

Description These standard 25 A SCRs are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. Features ■ On-state rms current, IT(RMS)25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to

文件：208.29 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

文件：93.52 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

文件：93.52 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体