N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex TN2540 is a low threshold enhancement mode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors,

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SUTEX

Standard 25 A SCRs

Description These standard 25 A SCRs are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. Features ■ On-state rms current, IT(RMS)25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to

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STMICROELECTRONICS

意法半导体

N-Channel Enhancement-Mode Vertical DMOS FET

文件：823.74 Kbytes 页数：14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件：741.15 Kbytes 页数：6 Pages

SUTEX

MOSFET, N-Channel Enhancement-Mode, 400V, 12 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold (2.0V max.)\nHigh input impedance\nLow input capacitance (125pF max.)\nFast switching speeds\nLow on-resistance\nFree from secondary breakdown\nLow input and output leakage;

Microchip

微芯科技

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

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STMICROELECTRONICS

意法半导体

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

文件：93.52 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

文件：93.52 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

isc Thyristors

FEATURES · Max. Blocking Voltage= VDRM, VRRM= 1200 V · IGT Maximum = 40 mA · Available in SMD D2PAK with Anode in Backside APPLICATIONS · Wind Renewable Energy Inverters · Battery Charge · Uninterruptible Power Supply (UPS)

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ISC

无锡固电

丝印：TN2540-12G；Package：D2PAK；Standard SCR, D²PAK, 25 A, 1200 V

Features • Max. blocking voltage = VDRM, VRRM = 1200 V • IGT maximum = 40 mA • High static and dynamic commutation at Tj = 125 °C – dl/dt = 50 A/μs – dV/dt = 1500 V/μs • ECOPACK®2 compliant (RoHS and HF compliance) Applications • Solar • Wind renewable energy inverters • Solid State Rela

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STMICROELECTRONICS

意法半导体