25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

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STMICROELECTRONICS

意法半导体

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

文件：93.52 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

丝印：TN2540-12G；Package：D2PAK；Standard SCR, D²PAK, 25 A, 1200 V

Features • Max. blocking voltage = VDRM, VRRM = 1200 V • IGT maximum = 40 mA • High static and dynamic commutation at Tj = 125 °C – dl/dt = 50 A/μs – dV/dt = 1500 V/μs • ECOPACK®2 compliant (RoHS and HF compliance) Applications • Solar • Wind renewable energy inverters • Solid State Rela

文件：216.25 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：TN2540-12G；Package：D2PAK；Standard SCR, D²PAK, 25 A, 1200 V

Features • Max. blocking voltage = VDRM, VRRM = 1200 V • IGT maximum = 40 mA • High static and dynamic commutation at Tj = 125 °C – dl/dt = 50 A/μs – dV/dt = 1500 V/μs • ECOPACK®2 compliant (RoHS and HF compliance) Applications • Solar • Wind renewable energy inverters • Solid State Rela

文件：216.25 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：476.99 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：598.05 Kbytes 页数：5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：476.99 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：598.05 Kbytes 页数：5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：476.99 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：477.13 Kbytes 页数：4 Pages

SUTEX