N-Channel Enhancement-Mode Vertical DMOS FET

General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

文件：848.2 Kbytes 页数：14 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：454.42 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：487.59 Kbytes 页数：5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件：317.84 Kbytes 页数：14 Pages

Microchip

微芯科技

MOSFET, N-Channel Enhancement-Mode, 300V, 25 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \n Integral source-drain diode \nHigh input impedance and high gain;

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

文件：848.2 Kbytes 页数：14 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：454.42 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

文件：848.2 Kbytes 页数：14 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：487.59 Kbytes 页数：5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

文件：848.2 Kbytes 页数：14 Pages

Microchip

微芯科技