TN2130中文资料MOSFET, N-Channel Enhancement-Mode, 300V, 25 Ohm数据手册Microchip规格书
TN2130规格书详情
描述 Description
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
特性 Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
技术参数
- 制造商编号
:TN2130
- 生产厂家
:Microchip
- BVdss min (V)
:300
- Rds (on) max (Ohms)
:25
- CISSmax (pF)
:50
- Vgs(th) max (V)
:2.4
- Packages
:3\\SOT-23
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICROCHIP/微芯 |
25+ |
SOT-23 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
SUPERTEX |
24+ |
smd |
39000 |
只做原装进口现货 |
询价 | ||
MICROCHIP(美国微芯) |
2447 |
SOT-23-3 |
31500 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
Microchip Technology |
2022+ |
TO-236-3,SC-59,SOT-23-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Microchip(微芯) |
25+ |
SOT-23-3 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
MICROCHIP/微芯 |
2406+ |
71260 |
诚信经营!进口原装!量大价优! |
询价 | |||
SUPERTEX |
24+ |
SOT-23 |
47186 |
郑重承诺只做原装进口现货 |
询价 | ||
MICROCHIP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
Microchip |
22+ |
TO2363 SC59 SOT233 |
9000 |
原厂渠道,现货配单 |
询价 | ||
N/A |
2450+ |
SOT23-3 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
询价 |