N-Channel Enhancement-Mode Vertical DMOS FET

General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

文件：848.2 Kbytes 页数：14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：487.59 Kbytes 页数：5 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impe

文件：848.2 Kbytes 页数：14 Pages

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：454.42 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件：317.84 Kbytes 页数：14 Pages

MICROCHIP

微芯科技