丝印：TM582FSEP；Package：TSSOP；TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold

1 Features • VID V62/23607-01XE • Radiation hardened – Single event latch-up (SEL) immune to 43 MeVcm2/ mg at 125°C – ELDRS free to 30krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30krad(Si) – TID characterized up to 30krad(Si) – Single event transient (SET) characte

文件：1.29195 Mbytes 页数：30 Pages

TI

德州仪器

丝印：TM582FSEP；Package：TSSOP；TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold

1 Features • VID V62/23607-01XE • Radiation hardened – Single event latch-up (SEL) immune to 43 MeVcm2/ mg at 125°C – ELDRS free to 30krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30krad(Si) – TID characterized up to 30krad(Si) – Single event transient (SET) characte

文件：1.30058 Mbytes 页数：33 Pages

TI

德州仪器

TMUX582F-SEP ±60-V Protected, Latch-up Immune 8:1 Multiplexer with Adjustable Fault Thresholds in Space Enhanced Plastic

1 Features • Radiation hardened • Single event latch-up (SEL) immune to 43 MeVcm2/ mg at 125°C • ELDRS free to 30 krad(Si) • Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • TID characterized up to 50 krad(Si) • Space enhanced plastic • Supply range: 8 V to 22 V or ±

文件：1.64971 Mbytes 页数：39 Pages

TI

德州仪器

TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold

1 Features • VID V62/23607-01XE • Radiation hardened – Single event latch-up (SEL) immune to 43 MeVcm2/ mg at 125°C – ELDRS free to 30krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30krad(Si) – TID characterized up to 30krad(Si) – Single event transient (SET) characte

文件：1.29195 Mbytes 页数：30 Pages

TI

德州仪器

TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold

1 Features • VID V62/23607-01XE • Radiation hardened – Single event latch-up (SEL) immune to 43 MeVcm2/ mg at 125°C – ELDRS free to 30krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30krad(Si) – TID characterized up to 30krad(Si) – Single event transient (SET) characte

文件：1.30058 Mbytes 页数：33 Pages

TI

德州仪器