TMUX582F-SEP ±60-V Protected, Latch-up Immune 8:1 Multiplexer with Adjustable Fault Thresholds in Space Enhanced Plastic

1 Features • Radiation hardened • Single event latch-up (SEL) immune to 43 MeVcm2/ mg at 125°C • ELDRS free to 30 krad(Si) • Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si) • TID characterized up to 50 krad(Si) • Space enhanced plastic • Supply range: 8 V to 22 V or ±

文件：1.64971 Mbytes 页数：39 Pages

TI

德州仪器

TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold

1 Features • VID V62/23607-01XE • Radiation hardened – Single event latch-up (SEL) immune to 43 MeVcm2/ mg at 125°C – ELDRS free to 30krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30krad(Si) – TID characterized up to 30krad(Si) – Single event transient (SET) characte

文件：1.29195 Mbytes 页数：30 Pages

TI

德州仪器

TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold

1 Features • VID V62/23607-01XE • Radiation hardened – Single event latch-up (SEL) immune to 43 MeVcm2/ mg at 125°C – ELDRS free to 30krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30krad(Si) – TID characterized up to 30krad(Si) – Single event transient (SET) characte

文件：1.30058 Mbytes 页数：33 Pages

TI

德州仪器

TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold

1 Features • VID V62/23607-01XE • Radiation hardened – Single event latch-up (SEL) immune to 43 MeVcm2/ mg at 125°C – ELDRS free to 30krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30krad(Si) – TID characterized up to 30krad(Si) – Single event transient (SET) characte

文件：1.29195 Mbytes 页数：30 Pages

TI

德州仪器

TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold

1 Features • VID V62/23607-01XE • Radiation hardened – Single event latch-up (SEL) immune to 43 MeVcm2/ mg at 125°C – ELDRS free to 30krad(Si) – Total ionizing dose (TID) RLAT for every wafer lot up to 30krad(Si) – TID characterized up to 30krad(Si) – Single event transient (SET) characte

文件：1.30058 Mbytes 页数：33 Pages

TI

德州仪器

具有可调节故障阈值的增强型航天产品 +/-60V 保护、闩锁效应抑制 8:1 多路复用器

TMUX582F-SEP 是一款适用于单端和差分操作的现代化 8:1 多路复用器。这款闩锁效应抑制器件可提供高达 ±60V 的强大过压保护，可谓是恶劣航空环境的理想选择。此外，该保护功能还可在通电、断电和浮动电源条件下运行。\n\n在过压或欠压事件等故障期间，故障通道会关闭，Sx 引脚变为高阻抗。如果选择此故障通道，漏极 (D) 将被拉至超出的故障轨（Vfp 或 Vfn）。所有其他未出现故障的 Sx 引脚都将继续正常运行。在正常运行期间，当电源 (Sx) 不超过 Vfp 或 Vfn 时，开关以低泄漏、低电容和超平坦导通电阻工作。这提供了具有最小失真的高性能信号完整性。\n\n TMUX582F • Radiation hardened\n• ELDRS free to 30 krad(Si)\n• TID characterized up to 50 krad(Si)\n• Supply range: 8 V to 22 V or ±5 V to ±16.5 V\n• Overvoltage tolerance up to 85 V from source to supplies or to drain\n• Cold sparing capable up to ±60 V\n• Interrupt flag feedback indicating faulted channel\n;

TI

德州仪器