丝印：TM6111；Package：WQFN(RTE)；TMUX611x ±17V, Low-capacitance, Low-leakage-current, Precision, Quad SPST Switches

1 Features • Wide supply range: ±5V to ±17V (dual), 10V to 17V (single) • Latch-up performance meets 100mA per JESD78 Class II Level A on all pins • Low on-capacitance: 4.2pF • Low input leakage: 5pA • Low charge injection: 0.6pC • Rail-to-rail operation • Low on-resistance: 120Ω • Fast

文件：1.77394 Mbytes 页数：37 Pages

TI

德州仪器

36-V, Low-Capacitance, Low-Leakage-Current, Precision, Quad SPST Switches

文件：380.32 Kbytes 页数：26 Pages

TI

德州仪器

丝印：TM6111；Package：WQFN(RTE)；TMUX611x ±17V, Low-capacitance, Low-leakage-current, Precision, Quad SPST Switches

1 Features • Wide supply range: ±5V to ±17V (dual), 10V to 17V (single) • Latch-up performance meets 100mA per JESD78 Class II Level A on all pins • Low on-capacitance: 4.2pF • Low input leakage: 5pA • Low charge injection: 0.6pC • Rail-to-rail operation • Low on-resistance: 120Ω • Fast

文件：1.77394 Mbytes 页数：37 Pages

TI

德州仪器

Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)

文件：207.68 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.48 Kbytes 页数：9 Pages

VBSEMI

微碧半导体