AMS3109

Micropower700mALowNoiseFastTransientResponseLDO

AMS3109

CurrentLimitprotection

AMS3109S

CurrentLimitprotection

AN3109

UsingtheMulti-Axisg-SelectEvaluationBoards

BX3109

RFAMPLIFIERMODEL

BYF3109

CEM3109

DualEnhancementModeFieldEffectTransistor

FEATURES ■30V,10A,RDS(ON)=14mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CEM3109

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 30V,10A,RDS(ON)=14mW@VGS=10V. RDS(ON)=20mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=30mW@VGS

CEU3109

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 30V,22A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=20mW@VGS=4.5V. Lead-freeplating;RoHScompliant. -30V,-18A,RDS(ON)=20mW@VGS=10V. RDS(ON)=30mW@VGS

CM3109

2ASink/SourceRegulatorforFrontSideBusandDDRMemoryBusTermination

ProductDescription TheCM3109isasinkingandsourcingregulatorspecificallydesignedforseries-parallelbusterminationforhighspeedchipsetbusesaswellasDDRmemorysystems.Itcansourceandsinkcurrentupto2Awithhighaccuracyof0.5.TheVTToutputvoltageisselectablebyVDD