RF AMPLIFIER MODEL

文件：71.88 Kbytes 页数：1 Pages

APITECH

Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 10A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. ■ -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：620.82 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V, 10A, RDS(ON) = 14mW @VGS = 10V. RDS(ON) = 20mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. -30V, -8A, RDS(ON) = 20mW @VGS = -10V. RDS(ON) = 30mW @VGS

文件：686 Kbytes 页数：7 Pages

CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V , 22A , RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 20mW @VGS = 4.5V. Lead-free plating ; RoHS compliant. -30V , -18A , RDS(ON) = 20mW @VGS = 10V. RDS(ON) = 30mW @VGS

文件：841.4 Kbytes 页数：7 Pages

CET-MOS

华瑞