COMMUNICATION

TPSEMI

谭慕半导体

High Speed IR Emitting Diode in ø5 mm (T–13/4) Package

DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions (in mm): Ø 5 • Leads with stand-off •

文件：87.1 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

文件：89.15 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package. The new technology combines the high speed of DHGaAlAs with the efficiency of standard GaAlAs and the low forward vo

文件：142.84 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司