High Speed IR Emitting Diode in ø5 mm (T–13/4) Package

DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions (in mm): Ø 5 • Leads with stand-off •

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High Speed IR Emitting Diode in ® mm (T-13/4) Package

Vishay

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Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

文件：122.99 Kbytes 页数：6 Pages

VishayVishay Siliconix

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GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

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VishayVishay Siliconix

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Infrared Emitting Diode, 875 nm, GaAlAs

文件：114.26 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技