AN442

DESIGNERSGUIDE

AOB442

40VN-ChannelMOSFET

GeneralDescription TheAOB442isfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatechargeandlowQrr.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOB442

iscN-ChannelMOSFETTransistor

AOD442

N-ChannelEnhancementModeFieldEffectTransistor

AOD442

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=37A@TC=25℃ •DrainSourceVoltage- :VDSS=60V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=20mΩ(Max) •100avalanchetested •MinimumL

AOD442

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=60V,ID=50A,RDS(ON)

AOD442

N-Channel60-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature

AOD442

60VN-ChannelMOSFET

GeneralDescription TheAOD442usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.AOD442L(GreenProduct)isofferedinalead-freepackage. Features VDS(V)=60V ID=38A

AOD442

60VN-ChannelMOSFET

GeneralFeatures VDS60V ID(atVGS=10V)37A RDS(ON)(atVGS=10V)

AOD442

60VN-ChannelMOSFET

GeneralDescription TheAOD442usedadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thosedevicesare suitableforuseasaloadswitchorinPWMapplications. GeneralFeatures VDS60V ID(atVGS=10V)37A RDS(ON)(atVGS=10V)