FDPF18N20FT

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FDPF18N20FT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FIR18N20PG

N-ChannelEnhancementModePowerMosfet

FKD18N20

N-Ch200VFastSwitchingMOSFETs

Description TheFKD18N20isthehighestperformance trenchN-chMOSFETswithextremehighcell density,whichprovideexcellentRDSONandgate chargeformostofthesynchronousbuck converterapplications. TheFKD18N20meettheRoHSandGreen Productrequirement,100EASguaranteedwith

FKH18N20

N-Ch200VFastSwitchingMOSFETs

Features ⚫AdvancedTrenchMOSTechnology ⚫LowGateCharge ⚫100EASGuaranteed ⚫GreenDeviceAvailable Applications ⚫LoadSwitch ⚫LEDApplications ⚫NetworkingApplications ⚫QuickCharger

FKP18N20

N-Ch200VFastSwitchingMOSFETs

Description TheFKP18N20isthehighestperformancetrench N-chMOSFETswithextremehighcelldensity, whichprovideexcellentRDSONandgatecharge formostofthesynchronousbuckconverter applications. TheFKP18N20meettheRoHSandGreen Productrequirement,100EASguaranteedwith f

FTP18N20

N-ChannelEnhancement

InPowerProductLines

G18N20K

N-ChannelEnhancementModePowerMOSFET

Description TheG18N20Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G18N20T

N-ChannelEnhancementModePowerMOSFET

Description TheG18N20Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

HY18N20D

200V/18AN-ChannelEnhancementModeMOSFET