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12N80

12A,800VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC12N80isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandh

UTCUnisonic Technologies

友顺友顺科技股份有限公司

12N80

800VN-ChannelPlanarMOSFET

Features RDSON=0.64Ω@Vgs=10V,Id=6A LowgateCharge(typical58.2nC) LowCrss(typical6.5pF) Fastswitchingcapability 100%avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

DAM12N80B

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM12N80D

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FIR12N80ANG

800VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FKPF12N80

Bi-DirectionalTriodeThyristorPlanarSilicon

ApplicationExplanation •Switchingmodepowersupply,lightdimmer,electricflasherunit,hairdrier •TVsets,stereo,refrigerator,washingmachine •Electricblanket,solenoiddriver,smallmotorcontrol •Photocopier,electrictool

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FKPF12N80

ApplicationExplanation

ApplicationExplanation •Switchingmodepowersupply,lightdimmer,electricflasherunit,hairdrier •TVsets,stereo,refrigerator,washingmachine •Electricblanket,solenoiddriver,smallmotorcontrol •Photocopier,electrictool

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FRF12N80CT

SuperJunctionMOSFET

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss. •Veryhighcommutationruggedness. •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC. Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWMstagesforAdapter,LCDTV,Lighting,and

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

IXFC12N80P

PolarHVHiPerFETPowerMOSFETISOPLUS220

IXYS

IXYS Corporation

IXFH12N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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