DAM12N80D

N-Channel Enhancement Mode MOSFET

FIR12N80ANG

800VN-ChannelMOSFET

FKPF12N80

Bi-DirectionalTriodeThyristorPlanarSilicon

ApplicationExplanation •Switchingmodepowersupply,lightdimmer,electricflasherunit,hairdrier •TVsets,stereo,refrigerator,washingmachine •Electricblanket,solenoiddriver,smallmotorcontrol •Photocopier,electrictool

FKPF12N80

ApplicationExplanation

ApplicationExplanation •Switchingmodepowersupply,lightdimmer,electricflasherunit,hairdrier •TVsets,stereo,refrigerator,washingmachine •Electricblanket,solenoiddriver,smallmotorcontrol •Photocopier,electrictool

FRF12N80CT

SuperJunctionMOSFET

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss. •Veryhighcommutationruggedness. •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC. Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWMstagesforAdapter,LCDTV,Lighting,and

IXFC12N80P

PolarHVHiPerFETPowerMOSFETISOPLUS220

IXFH12N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

IXFH12N80P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementMode Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXFQ12N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.85Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

IXFQ12N80P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementMode Features Internationalstandardpackages UnclampedInductiveSwitching(UIS)rated Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity