| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableoff-statecharacteristics,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePower | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N50Eissupplied | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHX3N50Eissupplied | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
3A,450Vand500V,3Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
3A,450Vand500V,3Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
DSeriesPowerMOSFET FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit( | VishayVishay Siliconix 威世科技 | Vishay | ||
DSeriesPowerMOSFET FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit( | VishayVishay Siliconix 威世科技 | Vishay | ||
StarMOSTPowerMOSFET | Good-Ark Good-Ark | Good-Ark | ||
N-CHANNELenhancementmodepowermostransistor N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2.5Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Surface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinitionso | VishayVishay Siliconix 威世科技 | Vishay | ||
Idealforautomatedplacement | VishayVishay Siliconix 威世科技 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GUOXINMICRO |
21+ |
TO-252 |
4580 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
紫光微 |
21+ |
TO-252 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
GUOXINMICRO |
19+ |
TO-252 |
1000 |
进口原装现货假一赔万力挺实单 |
询价 | ||
TRINNO |
2017+ |
TO-252 |
26589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
TRINNO |
24+ |
TO-252 |
5000 |
只做原装公司现货 |
询价 | ||
23+ |
N/A |
45880 |
正品授权货源可靠 |
询价 | |||
TRINNO |
2022+ |
22500 |
全新原装 货期两周 |
询价 | |||
TRINNO |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
TRINNO |
21+ |
TO-252 |
35200 |
一级代理/放心采购 |
询价 | ||
TRINNO |
12+PBF |
TO-252 |
1500 |
现货 |
询价 |
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