首页 >TMC1728E-NEW>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1.2MHz,3.0A,High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
1.2MHz,3.0A,High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
1.2MHz,3.0A,High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
1.2MHz,3.0A,High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
1.2MHz,3.0A,High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
1.2MHz,3.0A,High-EfficiencySynchronous-RectifiedBuckConverter | UPI uPI Semiconductor Corp | UPI | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1728isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Singlechiptype •LowOn-stateResistance RDS(on)1=19mΩ(TYP.)(VGS=10V,ID=4.5A) RDS(on)2=23mΩ(TYP.)(VGS=4.5V,ID=4.5A) RDS(on)3=24 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Singlechiptype •Lowon-stateresistance RDS(on)1=19mΩTYP.(VGS=10V,ID=4.5A) RDS(on)2=23mΩTYP.(VGS=4.5V,ID=4.5A) RDS(on)3=24mΩTYP.(VGS=4.0V,ID=4.5A) •LowCiss:Ciss=1700pFTYP. •Built-inG-Sprotectio | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Singlechiptype •Lowon-stateresistance RDS(on)1=19mΩTYP.(VGS=10V,ID=4.5A) RDS(on)2=23mΩTYP.(VGS=4.5V,ID=4.5A) RDS(on)3=24mΩTYP.(VGS=4.0V,ID=4.5A) •LowCiss:Ciss=1700pFTYP. •Built-inG-Sprotectio | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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