首页 >TMBRF20100CT-U/H>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.50VatIF=5A UltraLowVF=0.50VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.446VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighVoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighVoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighVoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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