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VF20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s

文件:167.72 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VF20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件:127.54 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世科技

VF20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:164.31 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VF20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:78.77 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世科技

VF20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:161.11 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VF20100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:151.62 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

VF20100C_V01

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件:127.54 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世科技

VF20100C-E3

Trench MOS Schottky technology

Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s

文件:167.08 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世科技

VF20100C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

文件:214.47 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世科技

VF20100C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s

文件:167.72 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    VF20100C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

供应商型号品牌批号封装库存备注价格
GS
2022+
16
全新原装 货期两周
询价
VISHAY
24+
TO-220F
36500
原装现货/放心购买
询价
Vishay(威世)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
VISHAY
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
23+
TO-200F
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
2022+
TO-220
12888
原厂代理 终端免费提供样品
询价
VISHAY/威世
22+
TO-220F
12245
现货,原厂原装假一罚十!
询价
VISHAY/威世
23+
TO-220
6000
原装正品,支持实单
询价
VISHAY
11+
TO-220F
149
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
VISHAY/威世
24+
NA/
4450
原装现货,当天可交货,原型号开票
询价
更多VF20100C供应商 更新时间2025-10-7 9:50:00