| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s 文件：167.72 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO 文件：104.01 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB20100C | Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter 文件：315.26 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：164.31 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：151.62 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB20100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.11 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO 文件：104.01 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter 文件：315.37 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, 文件：214.47 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Schottky technology Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s 文件：167.08 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VB20100C
- 功能描述：
肖特基二极管与整流器 20 Amp 100 Volt Dual TrenchMOS
- RoHS：
否
- 制造商：
Skyworks Solutions, Inc.
- 产品：
Schottky Diodes
- 峰值反向电压：
2 V
- 正向连续电流：
50 mA
- 配置：
Crossover Quad
- 正向电压下降：
370 mV
- 最大功率耗散：
75 mW
- 工作温度范围：
- 65 C to + 150 C
- 安装风格：
SMD/SMT
- 封装/箱体：
SOT-143
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY/威世 |
22+ |
TO-263 |
6000 |
十年配单,只做原装 |
询价 | ||
VISHAY/威世 |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
Vishay(威世) |
24+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
Vishay(威世) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
IR |
22+ |
TO-263 |
88619 |
询价 | |||
VISHAY |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 |
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