8204

SC&FC/PC3Pull-ProofFiberOpticConnectors

ACE8204TL

DualN-ChannelEnhancementModeFieldEffectTransistorwithESDProtection

Description TheACE8204TLusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge. Theyofferoperationoverawidegatedriverangefrom2.5Vto8V.ItisESDprotected.Thisdeviceis suitableforuseasauni-directionalorbi-directionalloadswitch,facilitatedby

ACE8204TLNN+H

DualN-ChannelEnhancementModeFieldEffectTransistorwithESDProtection

Description TheACE8204TLusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge. Theyofferoperationoverawidegatedriverangefrom2.5Vto8V.ItisESDprotected.Thisdeviceis suitableforuseasauni-directionalorbi-directionalloadswitch,facilitatedby

TPC8204

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSII)

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs •Smallfootprintduetosmallandthinpackage •Lowdrain−sourceONresistance:RDS(ON)=16mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=18S(typ.) •Lowleakagecurrent:IDSS=10µA(max)(VDS=

TPCP8204

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCS8204

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=13mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=15S(typ.) •Lowleakagecurrent:IDSS=10µA(max