首页 >TLP718F(TPF)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Super323SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR3APeakPulseCurrent Features •BVCEO>-20V •IC=-1AContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •LowSaturationVoltage-250mVMax@IC=-1A. •RCE(SAT)=200mΩ@1AforaLowEquivalentOn-Resistance •500mWPowerDissipation •ExcellenthFECharacteristicsupto3A •ComplementaryNPNT | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUAL20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-20V; •IC=-3.5AContinuousCollectorCurrent •RSAT=64mΩforLowEquivalentOnResistance •LowSaturationVoltage(-220mV@-1A) •hFEcharacterizedupto-6Aforhighcurrentgainholdsup •DualNPNsavingfootprintandcomponentcount •Lowprofile | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUAL20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-20V; •IC=-3.5AContinuousCollectorCurrent •RSAT=64mΩforLowEquivalentOnResistance •LowSaturationVoltage(-220mV@-1A) •hFEcharacterizedupto-6Aforhighcurrentgainholdsup •DualNPNsavingfootprintandcomponentcount •Lowprofile | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEspecifiedupto-6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEspecifiedupto-6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
20VPNPLOWSATURATIONSWITCHINGTRANSISTOR FeaturesandBenefits •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEspecifiedupto-6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
20VPNPLOWSATURATIONTRANSISTORAND FeaturesandBenefits PNPTransistor •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEcharacterizedupto-6Aforhighcurrentgainholdup SchottkyDiode •BVR>40 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
20VPNPLOWSATURATIONTRANSISTORAND FeaturesandBenefits PNPTransistor •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEcharacterizedupto-6Aforhighcurrentgainholdup SchottkyDiode •BVR>40 | DIODESDiodes Incorporated 美台半导体 | DIODES |
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