ZUMT718TA

Super323
SOT323PNPSILICONPOWER(SWITCHING)TRANSISTOR3APeakPulseCurrent

Features •BVCEO>-20V •IC=-1AContinuousCollectorCurrent •ICM=-3APeakPulseCurrent •LowSaturationVoltage-250mVMax@IC=-1A. •RCE(SAT)=200mΩ@1AforaLowEquivalentOn-Resistance •500mWPowerDissipation •ExcellenthFECharacteristicsupto3A •ComplementaryNPNT

ZXTD718MC

DUAL20VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits •BVCEO>-20V; •IC=-3.5AContinuousCollectorCurrent •RSAT=64mΩforLowEquivalentOnResistance •LowSaturationVoltage(-220mV@-1A) •hFEcharacterizedupto-6Aforhighcurrentgainholdsup •DualNPNsavingfootprintandcomponentcount •Lowprofile

ZXTD718MCTA

DUAL20VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits •BVCEO>-20V; •IC=-3.5AContinuousCollectorCurrent •RSAT=64mΩforLowEquivalentOnResistance •LowSaturationVoltage(-220mV@-1A) •hFEcharacterizedupto-6Aforhighcurrentgainholdsup •DualNPNsavingfootprintandcomponentcount •Lowprofile

ZXTP718MA

20VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEspecifiedupto-6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA

ZXTP718MATA

20VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEspecifiedupto-6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA

ZXTP718MATC

20VPNPLOWSATURATIONSWITCHINGTRANSISTOR

FeaturesandBenefits •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEspecifiedupto-6Aforhighcurrentgainholdup •Lowprofile0.6mmhighpackageforthinapplications •RθJA

ZXTPS718MC

20VPNPLOWSATURATIONTRANSISTORAND

FeaturesandBenefits PNPTransistor •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEcharacterizedupto-6Aforhighcurrentgainholdup SchottkyDiode •BVR>40

ZXTPS718MCTA

20VPNPLOWSATURATIONTRANSISTORAND

FeaturesandBenefits PNPTransistor •BVCEO>-20V •IC=-3.5AContinuousCollectorCurrent •LowSaturationVoltage(-220mVmax@-1A) •RSAT=64mΩforalowequivalentOn-Resistance •hFEcharacterizedupto-6Aforhighcurrentgainholdup SchottkyDiode •BVR>40