丝印：TL；Package：CPT3；Low Vce(sat) Transistor (Strobe flash) (20V, 10A)

Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / IB= 4A / 50mA. 2) High current capacity, typically IC= 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834.

文件：68.46 Kbytes 页数：3 Pages

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丝印：TL；Package：CPT3；Power transistor (40V, 2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.

文件：72.03 Kbytes 页数：3 Pages

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丝印：TL；Package：CPT3；Power Transistor 50V, 3A

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

文件：77.01 Kbytes 页数：3 Pages

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丝印：TL；Package：CPT3；High-current gain Power Transistor (-60V, -3A)

2SB1639 ( -60V, -3A) 2SD2318, 2SD1944 (60V, 3A) High DC current gain.

文件：29.92 Kbytes 页数：1 Pages

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丝印：TL；Package：CPT3；High-current gain Power Transistor(60V, 3A)

Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639.

文件：75.31 Kbytes 页数：3 Pages

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丝印：TL；Package：CPT3；Power Transistor (400V, 0.5A)

Features 1) High breakdown voltage.(BVCEO=400V)

文件：64.58 Kbytes 页数：3 Pages

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丝印：TL；Package：TSMT3；General purpose amplification (12V, 1.5A)

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat)≦200mV at IC=500mA/IB=25mA Application LOW FREQUENCY AMPLIFIER

文件：70.15 Kbytes 页数：3 Pages

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丝印：TL；Package：CPT3；Switching (500V, 2A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.

文件：138.71 Kbytes 页数：4 Pages

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丝印：TL；Package：CPT3；Switching (200V, 3A)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. Structure Silicon N-channel MOSFET

文件：139.05 Kbytes 页数：4 Pages

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丝印：TL；Package：EMT3；Small switching (30V, 0.1A)

Small switching (30V, 0.1A)
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA)
Structure S

文件：87.75 Kbytes 页数：5 Pages

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