丝印：TL；Package：CPT3；10V Drive Nch MOS FET

文件：95.79 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：TL022C；Package：SOIC；DUAL LOW-POWER OPERATIONAL AMPLIFIERS

Very Low Power Consumption Power Dissipation With ±2-V Supplies 170 mW Typ Low Input Bias and Offset Currents Output Short-Circuit Protection Low Input Offset Voltage Internal Frequency Compensation Latch-Up-Free Operation Popular Dual Operational Amplifier Pinout description The TL022

文件：562.31 Kbytes 页数：16 Pages

TI

德州仪器

丝印：TL022C；Package：SOIC；DUAL LOW-POWER OPERATIONAL AMPLIFIERS

Very Low Power Consumption Power Dissipation With ±2-V Supplies 170 mW Typ Low Input Bias and Offset Currents Output Short-Circuit Protection Low Input Offset Voltage Internal Frequency Compensation Latch-Up-Free Operation Popular Dual Operational Amplifier Pinout description The TL022

文件：562.31 Kbytes 页数：16 Pages

TI

德州仪器

丝印：TL022C；Package：SOIC；DUAL LOW-POWER OPERATIONAL AMPLIFIERS

Very Low Power Consumption Power Dissipation With ±2-V Supplies 170 mW Typ Low Input Bias and Offset Currents Output Short-Circuit Protection Low Input Offset Voltage Internal Frequency Compensation Latch-Up-Free Operation Popular Dual Operational Amplifier Pinout description The TL022

文件：562.31 Kbytes 页数：16 Pages

TI

德州仪器

丝印：TL022CP；Package：PDIP；DUAL LOW-POWER OPERATIONAL AMPLIFIERS

Very Low Power Consumption Power Dissipation With ±2-V Supplies 170 mW Typ Low Input Bias and Offset Currents Output Short-Circuit Protection Low Input Offset Voltage Internal Frequency Compensation Latch-Up-Free Operation Popular Dual Operational Amplifier Pinout description The TL022

文件：562.31 Kbytes 页数：16 Pages

TI

德州仪器

丝印：TL022CP；Package：PDIP；DUAL LOW-POWER OPERATIONAL AMPLIFIERS

Very Low Power Consumption Power Dissipation With ±2-V Supplies 170 mW Typ Low Input Bias and Offset Currents Output Short-Circuit Protection Low Input Offset Voltage Internal Frequency Compensation Latch-Up-Free Operation Popular Dual Operational Amplifier Pinout description The TL022

文件：562.31 Kbytes 页数：16 Pages

TI

德州仪器

丝印：TL026C；Package：SOIC；DIFFERENTIAL HIGH-FREQUENCY AMPLIFIER WITH AGC

Low Output Common-Mode Sensitivity to AGC Voltages Input and Output Impedances Independent of AGC Voltage Peak Gain . . . 38 dB Typ Wide AGC Range . . . 50 dB Typ 3-dB Bandwidth . . . 50 MHz Other Characteristics Similar to NE592 and uA733 description This device is a monolithic two-st

文件：608.52 Kbytes 页数：20 Pages

TI

德州仪器

丝印：TL026C；Package：SOIC；DIFFERENTIAL HIGH-FREQUENCY AMPLIFIER WITH AGC

Low Output Common-Mode Sensitivity to AGC Voltages Input and Output Impedances Independent of AGC Voltage Peak Gain . . . 38 dB Typ Wide AGC Range . . . 50 dB Typ 3-dB Bandwidth . . . 50 MHz Other Characteristics Similar to NE592 and uA733 description This device is a monolithic two-st

文件：608.52 Kbytes 页数：20 Pages

TI

德州仪器

丝印：TL026C；Package：SOIC；DIFFERENTIAL HIGH-FREQUENCY AMPLIFIER WITH AGC

Low Output Common-Mode Sensitivity to AGC Voltages Input and Output Impedances Independent of AGC Voltage Peak Gain . . . 38 dB Typ Wide AGC Range . . . 50 dB Typ 3-dB Bandwidth . . . 50 MHz Other Characteristics Similar to NE592 and uA733 description This device is a monolithic two-st

文件：608.52 Kbytes 页数：20 Pages

TI

德州仪器

丝印：TL026C；Package：SOIC；DIFFERENTIAL HIGH-FREQUENCY AMPLIFIER WITH AGC

Low Output Common-Mode Sensitivity to AGC Voltages Input and Output Impedances Independent of AGC Voltage Peak Gain . . . 38 dB Typ Wide AGC Range . . . 50 dB Typ 3-dB Bandwidth . . . 50 MHz Other Characteristics Similar to NE592 and uA733 description This device is a monolithic two-st

文件：608.52 Kbytes 页数：20 Pages

TI

德州仪器