Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 3.6 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

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iscN-Channel MOSFET Transistor

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无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 7 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 550 V \nGate-Source voltage VGSS +/-30 V ;

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TO252

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TO-220

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