High-Efficiency DC-DC Converter Applications Switching Regulator

Features (1) High-speed switching (2) Low gate charge: QSW = 9.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Applications • Swi

文件：200.23 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

文件：333.31 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 40 V (D-S) MOSFET

文件：1.08019 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：2.61171 Mbytes 页数：5 Pages

DOINGTER

杜因特

Power MOSFET (N-ch single 30V VDSS 60V)

Polarity：N-ch\nGeneration：U-MOSⅥ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 50 A \nPower Dissipation PD 60 W \nDrain-Source voltage VDSS 40 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝