丝印：TK3P80E；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 3.9 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.3 mA)

文件：382.93 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：320.66 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅧ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 3 A \nPower Dissipation PD 80 W \nDrain-Source voltage VDSS 800 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝

Motor circuit breaker, TeSys GV3, 3P, 56-80 A, thermal magnetic, screw clamp terminals

文件：182.22 Kbytes 页数：3 Pages

SCHNEIDER

施耐德

SINGLE—PORT HIGH SPEED MODULAR JACK, 8 POSITIONS, 8 CONTACTS, WITH FLANGE & SHIELD WITH 4 SIDE GROUND TABS —RoHS COMPLIANT

文件：105.85 Kbytes 页数：1 Pages

AMPHENOLCS

安费诺

SINGLE—PORT HIGH SPEED MODULAR JACK, 8 POSITIONS, 8 CONTACTS, WITH FLANGE & SHIELD WITH 4 SIDE GROUND TABS —RoHS COMPLIANT

文件：105.85 Kbytes 页数：1 Pages

AMPHENOLCS

安费诺