丝印：TK200V60Z1；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.166 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.48 mA)

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Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\n\nPolarity：N-ch\n\nGeneration：DTMOSⅥ\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available

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TO-220

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