TK20E60W

Marking：K20E60W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1mA)

TK20E60W

Isc N-Channel MOSFET Transistor

TK20E60W5

Marking：K20E60W5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.15Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TK20E60W5

Isc N-Channel MOSFET Transistor

ITK20E60U

iscN-ChannelMOSFETTransistor

RU20E60L

N-ChannelMOSFETusesadvancedtrenchtechnology

RU20E60L

N-ChannelAdvancedPowerMOSFET

TK20E60U

SwitchingVoltageRegulators

TK20E60U

iscN-ChannelMOSFETTransistor

TK20E60U

SwitchingVoltageRegulators

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.165Ω(typ.) (2)Highforwardtransferadmittance:|Yfs|=12S(typ.) (3)Lowleakagecurrent:IDSS=100µA(max)(VDS=600V) (4)Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) Applications •SwitchingVoltageRegulat