丝印：K11A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.33 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA)

文件：241.96 Kbytes 页数：10 Pages

TOSHIBA

东芝

iscN-Channel MOSFET Transistor

文件：288.62 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 马来西亚 Drain current ID 11.1 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝

iscN-Channel MOSFET Transistor

文件：288.62 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1

文件：333.26 Kbytes 页数：9 Pages

TOSHIBA

东芝

N-Channel 650V (D-S) Power MOSFET

文件：1.07166 Mbytes 页数：9 Pages

VBSEMI

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