ITK11A65W规格书应用电路贸易商无锡固电ISC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
ITK11A65W	文件：288.62 Kbytes Page：2 Pages	iscN-Channel MOSFET Transistor 文件：288.62 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
K11A65D	文件：333.26 Kbytes Page：9 Pages	MOSFETs Silicon N-Channel MOS Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: \|Yfs\| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 文件：333.26 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TK11A65	文件：1.07166 Mbytes Page：9 Pages	N-Channel 650V (D-S) Power MOSFET 文件：1.07166 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
TK11A65D	文件：333.26 Kbytes Page：9 Pages	MOSFETs Silicon N-Channel MOS Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: \|Yfs\| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 文件：333.26 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA

更多ITK11A65W供应商更新时间2025-10-5 15:01:00